Understanding of hot-carrier-injection induced IDLIN kink effect in sub-100nm HV NLDMOS

2012 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2012-04-15 DOI:10.1109/IRPS.2012.6241808

D. J. Wu, D. Maji, J. Shih, Y. Lee, C. C. Liu, Y. H. Huang, R. Ranjan, K. Wu

{"title":"Understanding of hot-carrier-injection induced IDLIN kink effect in sub-100nm HV NLDMOS","authors":"D. J. Wu, D. Maji, J. Shih, Y. Lee, C. C. Liu, Y. H. Huang, R. Ranjan, K. Wu","doi":"10.1109/IRPS.2012.6241808","DOIUrl":null,"url":null,"abstract":"Hot-carrier-injection (HCI) induced effects in the electrical characteristics of high voltage n-type Lateral-Diffused-MOSFET (NLDMOS) have been studied extensively under various stress conditions. Width (W) dependent HCI induced appearance/disappearance of kink in linear drain current (IDLIN) of NLDMOS, (i.e. kink appears after stress in large W, but it disappears after stress in narrow W, which presents initially in fresh device IDLIN) is observed under high gate voltage (VG) and drain voltage (VD) stress condition. Such interesting phenomenon has never been seen during maximum substrate current (ISUBMAX) HCI stress. TCAD simulation results revealed that enhancement in interface state generation and localized electron trapping in the gate oxide along the source side drift region are the main root causes of the appearance/disappearance of IDLIN kink under high VG and VD stress. It is suspected that HCI induced IDLIN kink may cause device reliability modeling/prediction concern, if model target is based on IDLIN degradation.","PeriodicalId":341663,"journal":{"name":"2012 IEEE International Reliability Physics Symposium (IRPS)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE International Reliability Physics Symposium (IRPS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS.2012.6241808","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 5

Abstract

Hot-carrier-injection (HCI) induced effects in the electrical characteristics of high voltage n-type Lateral-Diffused-MOSFET (NLDMOS) have been studied extensively under various stress conditions. Width (W) dependent HCI induced appearance/disappearance of kink in linear drain current (IDLIN) of NLDMOS, (i.e. kink appears after stress in large W, but it disappears after stress in narrow W, which presents initially in fresh device IDLIN) is observed under high gate voltage (VG) and drain voltage (VD) stress condition. Such interesting phenomenon has never been seen during maximum substrate current (ISUBMAX) HCI stress. TCAD simulation results revealed that enhancement in interface state generation and localized electron trapping in the gate oxide along the source side drift region are the main root causes of the appearance/disappearance of IDLIN kink under high VG and VD stress. It is suspected that HCI induced IDLIN kink may cause device reliability modeling/prediction concern, if model target is based on IDLIN degradation.

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亚100nm HV NLDMOS中热载流子注入诱导IDLIN结效应的研究

热载流子注入(HCI)对高压n型横向扩散mosfet (NLDMOS)电学特性的影响在各种应力条件下得到了广泛的研究。在高栅极电压(VG)和漏极电压(VD)应力条件下，HCI诱导NLDMOS线性漏极电流(IDLIN)中发生了与宽度(W)相关的扭转现象(即大W应力后出现扭转，窄W应力后消失，最初出现在新器件IDLIN中)。在最大衬底电流(ISUBMAX) HCI应力期间从未见过这种有趣的现象。TCAD模拟结果表明，在高VG和VD应力下，界面态生成的增强和源侧漂移区栅极氧化物中的局域电子捕获是IDLIN结出现/消失的主要原因。如果模型目标是基于IDLIN退化，那么HCI诱导的IDLIN结可能会引起设备可靠性建模/预测问题。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2012 IEEE International Reliability Physics Symposium (IRPS)

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