A newly structured high voltage diode highlighting oscillation free function in recovery process

Abstract

At present, switching devices with high performance such as GCT (Gate Commutated Turn-off) thyristor and IGBT which had higher operation voltage than about 4.5 kV have been realized. However, as a freewheeling diode which should realize the suitable recovery performance to the turn-on performance of those switching devices is not successful, they were restricted in the turn-on operation for inverter systems. Therefore, advanced diodes with high operation voltage and soft recovery performance are desired in order to improve the system performance.