Study of de-gate remnant resolution with high reliability performance moulding compound

S. Ng, H. T. Wang, F. Goo
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Abstract

Ever increasing stringent reliability requirements in semiconductor package demands a mold compound with a property of resisting package crack under stress condition of High Temperature Storage (HTS) at 175°C, compatible with package assembly material such as copper interconnect, High Humidity High Temperature Gate Stress (H3TGS) as well as meeting second level reliability test in Thermal Cycle on Board (TCoB). Such property would require a molding compound that has higher adhesion, higher cross link density and storage modulus in order to provide good protection over the chip and interconnect. These properties, however, would mean a higher adhesion molding compound that results in a harder-to-degate mold area, leaving mold remnant on the lead-frame runner after molding operation and leads to assembly yield loses. Material analysis, extended reliability test, design revision on mold de-gating tool and leadframe, molding parameter optimization are conducted in order to minimize molding runner remnant and subsequently improve molding assembly yield. Extended reliability test of H3TGS at 175°C, HTS 175°C and 6000 cycle of TCoB has been performed with package A to identify the right formulation selection for mold compound and impurities level. Several iterations to the DOE are done throughout the studies. Brainstorming session produced a list of molding parameters and mechanism potentially leading to the mold remnant. Using the button shear test at various temperature, adhesion of various mold compounds at various temperature and contact area are identified to have greatest impact. A design of experiements focusing on cooling station design & cooling time are performed. Additionally, contact area of mold compound to leadframe are also being considered to reduce the remnants rate. It reveals that mold remnant occurrence on package A has failure rate of 60%. By using the selected high performance mold compound on package B, the result is much better with almost no mold remnant observed on the runner area due to much lesser contact. Therefore a correlation of contact area versus remnant rate has been established, and package A leadframe is being redesigned together with the de-gating tool and thus this improve the remnant to 1%.
具有高可靠性性能的脱门残余分辨率模塑料的研究
半导体封装日益严格的可靠性要求要求模具化合物具有在175°C高温储存(HTS)应力条件下抵抗封装裂纹的性能,与铜互连等封装组装材料兼容,高湿高温栅应力(H3TGS),并满足板上热循环(TCoB)二级可靠性测试。这种特性需要一种具有更高附着力、更高交联密度和存储模量的成型化合物,以便在芯片和互连上提供良好的保护。然而,这些特性意味着更高的粘合成型化合物,导致更难降解的模具区域,在成型操作后在引线框架流道上留下模具残留物,并导致装配良率损失。通过材料分析、扩展可靠性试验、模具脱料工具和引线架设计修改、成型参数优化,最大限度地减少成型流道残留,提高成型装配成品率。在175°C、175°C和6000次TCoB循环下对H3TGS进行了扩展可靠性测试,以确定模具化合物和杂质水平的正确配方选择。在整个研究过程中,对DOE进行了多次迭代。头脑风暴会议产生了一系列的成型参数和机制,可能导致模具残留。通过不同温度下的按钮剪切试验,确定了不同温度下各种模具化合物的粘附性和接触面积对其影响最大。针对冷却站的设计和冷却时间进行了实验设计。此外,还考虑了模具化合物与引线框架的接触面积,以减少残余率。结果表明,A包的模具残留率为60%。通过在包装B上使用选定的高性能模具化合物,结果要好得多,由于接触少得多,在流道区域几乎没有观察到模具残余。因此,已经建立了接触面积与残余率的相关性,并且封装a引线框架正在与脱门工具一起重新设计,从而将残余率提高到1%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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