New Failure Analysis of Tungsten Plug Corrosion in Via Process

Dong-Sun Kim, Wonjoon Ho, Jae-Yeong Kim, Eui-Yong Shin, Jin-ha Kim, H. Lee
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引用次数: 4

Abstract

In this paper, systematic pair bit failure is analyzed in failure bit map of deep-submicron CMOS technology. Tungsten plug corrosion in contacts of stacked contact/metal/via structure is observed from careful analysis of failure bit. Then, some experiments have been carried out to identify and resolve this corrosion failure. This corrosion reaction occurred through the void space, which is formed by excess via over-etch along the sidewall of underlying metal in contact-metal-via stack structure and by the plasma charging and electrochemical reaction during via etch and post cleaning. This failure can be practically avoided by optimizing via over-etch time and underlying metal profile and it is confirmed by product yield and failure bit map data
通孔工艺钨塞腐蚀失效新分析
本文对深亚微米CMOS技术失效位图中的系统对位失效进行了分析。通过对失效钻头的仔细分析,观察到堆积触点/金属/通孔结构触点的钨塞腐蚀。然后,进行了一些实验来识别和解决这种腐蚀失效。这种腐蚀反应是通过空洞空间发生的,空洞空间是由接触-金属-通孔堆结构中沿下垫金属侧壁的过量过蚀刻以及通孔蚀刻和清洗后的等离子体充电和电化学反应形成的。这种故障实际上可以通过优化过蚀刻时间和底层金属轮廓来避免,并且可以通过产品良率和故障位图数据来证实
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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