P. Ren, R. Gao, Z. Ji, H. Arimura, J. F. Zhang, R. Wang, M. Duan, W. Zhang, J. Franco, S. Sioncke, D. Cott, J. Mitard, L. Witters, H. Mertens, B. Kaczer, A. Mocuta, N. Collaert, D. Linten, R. Huang, A. Thean, G. Groeseneken
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引用次数: 19
Abstract
For the first time, two different types of electron traps are clearly identified in Ge nFETs with Type-A controlled by the HfO2 layer thickness and Type-B by the Si growth induced Ge segregation. Only Type-B are responsible for mobility degradation and they do not saturate with stress time, while the opposite applies to Type A. A PBTI model is proposed and validated for the long term prediction.
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