Development of 3D stack package using silicon interposer for high power application

N. Khan, S. Yoon, A. Viswanath, V. Ganesh, D.W. Ranganathan, S. Lim, K. Vaidyanathan
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引用次数: 18

Abstract

Stacking of many functional chips in a 3D stack package leads to high heat dissipation. Therefore a new platform technology is required to assemble chips vertically and remove the heat effectively. A 3D stacked package with silicon interposers is developed to integrate one ASIC and two memory chips in a package. Electrical connections in the silicon interposer are formed by through silicon via. Silicon has much high thermal conductivity than organic interposers, which reduces drastically the package thermal resistance. Thermal performances of the 3D package are analyzed and thermal enhancement methods like thermal vias, thermal bridging are evaluated. The designed package is having 5 times lesser thermal resistance compared to the package with organic substrate. An additional silicon heat spreader is attached to the package for high power application. Numerical analysis and experimental validation are carried out. The designed 3D stack package is found suitable for 20 watts heat dissipation
大功率硅介层三维堆叠封装的开发
在3D堆叠封装中堆叠许多功能芯片会导致高散热。因此,需要一种新的平台技术来垂直组装芯片并有效地散热。设计了一种集成了一个专用集成电路和两个存储芯片的硅中间层3D堆叠封装。硅中间层中的电气连接是通过硅通孔形成的。硅具有比有机中间体高得多的导热性,这大大降低了封装的热阻。分析了三维封装的热性能,并对热通孔、热桥接等热增强方法进行了评价。与采用有机基板的封装相比,所设计的封装的热阻降低了5倍。一个额外的硅散热器被附加到高功率应用的封装。进行了数值分析和实验验证。设计的3D堆叠封装适合20瓦的散热
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