Finite element numerical modeling of currents in VLSI interconnects

Abstract

Three-dimensional finite-element modeling has been used to simulate density distributions in filled-via structures. Peak current density in a single filled via was studied as a function of the direction of the current path, resistivity of the via-filled material, metal overlap of the via, and misalignment. Simulations were also carried out to examine the effects of the direction of the current flow and the resistivity of the via-fill material on the distribution of current in multiple vias.<>