Investigation of a microchannel-based cooling interposer for high-performance memory-on-logic 3DIC design

S. Melamed, Masaru Hashino, F. Kato, S. Nemoto, T. Bui, K. Kikuchi, H. Nakagawa, M. Aoyagi
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Abstract

3D integrated circuits (3DICs) stack wafers vertically, allowing for heterogeneous integration with shortened wirelengths between multiple circuits. In memory-on-Iogic systems there is a significant concern that high-power sections of the processor will create large thermal gradients that cause logical failures in the stacked memory. In this paper we investigate the use of a microchannel-based interposer to cool the microprocessor while simultaneously decreasing the thermal gradient that the processor imposes on the memory. We have found that hotspots are relatively insensitive to design parameters when the processor die is 300 μm thick, however at a thickness of 10 μm the hotspot temperatures are highly dependent on the microchannel sizing and the thickness of the SiNR polymer layer that was used to seal the microchannels and bond the wafers.
高性能逻辑存储器3DIC设计中基于微通道的散热中间层研究
3D集成电路(3dic)垂直堆叠晶圆,允许多个电路之间的异构集成和缩短的带宽。在内存-on- logic系统中,存在一个重要的问题,即处理器的高功率部分将产生较大的热梯度,从而导致堆叠内存中的逻辑故障。在本文中,我们研究了使用基于微通道的中间层来冷却微处理器,同时降低处理器对存储器施加的热梯度。我们发现,当处理器芯片厚度为300 μm时,热点对设计参数相对不敏感,但是当处理器芯片厚度为10 μm时,热点温度高度依赖于微通道尺寸和用于密封微通道和粘合晶圆的SiNR聚合物层的厚度。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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