System Power Integrity and radiation analysis of packaging by CMOS inverter

Pei-Chen Kuo, Yu-Yung Wu, S. Wu
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Abstract

This paper focuses on Signal Integrity (SI) and Power Integrity (PI) integration characteristic research. The voltage fluctuation across the power supply of Integrity Circuit (IC) is called Simultaneous Switching Noise (SSN). The research emphasizes on the SSN generated from packages since the switching of I/O in chip. A CMOS inverter chip [1] is designed because of the simplicity of the model, the influence of packages and interconnects on signal quality can also be observed more clearly. It is utilized to evaluate and compare the effects of SSN generated from the Power Distribution Network (PDN) and the difference of transport channel quality for multiple signal paths on package. Besides, a well path design also has lower radiation for avoiding interfering chip. Make a radiation analysis of path designs. Finally, propose best and worst package designs.
CMOS逆变器封装系统功率完整性及辐射分析
本文主要对信号完整性(SI)和功率完整性(PI)集成特性进行了研究。集成电路(IC)电源上的电压波动称为同步开关噪声(SSN)。重点研究了芯片中I/O切换后封装产生的SSN。设计了一种CMOS逆变器芯片[1],由于模型简单,也可以更清楚地观察到封装和互连对信号质量的影响。利用它来评估和比较配电网络(PDN)产生的SSN对封装的影响以及多个信号路径传输信道质量的差异。此外,井径设计还具有较低的辐射,避免了芯片的干扰。对路径设计进行辐射分析。最后,提出最佳和最差的包装设计。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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