M. Mescher, T. Abe, B. Brunett, H. Metla, T. E. Schlesinger, M. L. Reed
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引用次数: 14
Abstract
Piezoelectric actuators are particularly advantageous for MEMS because of their high stored energy density compared to electrostatic and thermal actuators. Lead-zirconate-titanate PbZr,Til -,03 (PZT) films would be very useful as microactuators due to their superior piezoelectric properties. We have previously reported stoichiometric, perovskite-structured thin films of PZT, suitable for microactuator applications, fabricated with composite target magnetron sputtering. These films are under investigation for several applications, including a natural gas flowmeter, and wavelength tunable electro-optic devices. In this work, we describe two experimental results regarding the processing of these films: (1) a decrease in anneal time from 18 hours to 5 s using rapid thermal annealing, and (2) sputter deposition of piezoelectric films of PZT on GaAs substrates.