A synthesizable ram bist circuit for applying an O(n log/sub 2/ n) test that detects scrambled static pattern-sensitive faults

B. Cockburn, D.P. Sarda
{"title":"A synthesizable ram bist circuit for applying an O(n log/sub 2/ n) test that detects scrambled static pattern-sensitive faults","authors":"B. Cockburn, D.P. Sarda","doi":"10.1109/MTDT.1996.782493","DOIUrl":null,"url":null,"abstract":"In this paper we describe improvements and extensions to the BIST RAM scheme described earlier by Cockburn and Sat. The first improvement is the use of maximum transition counters, instead of binary counters or linear feedback shift registers, to generate the addresses that are used in the self-test. This change increases the ability of the tests to detect delay faults in the peripheral circuitry. The second improvement is the extension of the original scheme to use a new O(n log/sub 2/ n) test for detecting scrambled static pattern sensitive faults. The O(n log/sub 2/ n) test is similar to a test described by Franklin and Saluja; however, the new test is approximately 20% shorter. In addition, the new test is transparent; that is, the contents of a fault-free memory are restored by the time the self-test has terminated. The RAM BIST circuit for the new scheme was specified and verified using VHSIC Hardware Description Language (VHDL). Instances of the BIST circuit can be synthesized automatically for any arbitrary RAM size using commercial logic synthesis tools. As with the scheme described by Cockburn and Sat, the hardware area overhead of the new scheme is below 1% for 4 Mb RAMs and this figure drops rapidly for larger RAM sizes.","PeriodicalId":228146,"journal":{"name":"IEEE International Workshop on Memory Technology, Design and Testing,","volume":"10 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-08-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE International Workshop on Memory Technology, Design and Testing,","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MTDT.1996.782493","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5

Abstract

In this paper we describe improvements and extensions to the BIST RAM scheme described earlier by Cockburn and Sat. The first improvement is the use of maximum transition counters, instead of binary counters or linear feedback shift registers, to generate the addresses that are used in the self-test. This change increases the ability of the tests to detect delay faults in the peripheral circuitry. The second improvement is the extension of the original scheme to use a new O(n log/sub 2/ n) test for detecting scrambled static pattern sensitive faults. The O(n log/sub 2/ n) test is similar to a test described by Franklin and Saluja; however, the new test is approximately 20% shorter. In addition, the new test is transparent; that is, the contents of a fault-free memory are restored by the time the self-test has terminated. The RAM BIST circuit for the new scheme was specified and verified using VHSIC Hardware Description Language (VHDL). Instances of the BIST circuit can be synthesized automatically for any arbitrary RAM size using commercial logic synthesis tools. As with the scheme described by Cockburn and Sat, the hardware area overhead of the new scheme is below 1% for 4 Mb RAMs and this figure drops rapidly for larger RAM sizes.
一种可合成的ram bist电路,用于应用O(n log/sub 2/ n)测试,检测加扰的静态模式敏感故障
在本文中,我们描述了对Cockburn和Sat先前描述的BIST RAM方案的改进和扩展。第一个改进是使用最大转换计数器,而不是二进制计数器或线性反馈移位寄存器,来生成用于自测的地址。这种变化增加了测试检测外围电路延迟故障的能力。第二个改进是对原方案的扩展,使用一个新的O(n log/sub 2/ n)测试来检测加扰的静态模式敏感故障。O(n log/sub 2/ n)测试类似于Franklin和Saluja描述的测试;然而,新的测试时间缩短了大约20%。此外,新的测试是透明的;也就是说,在自检结束时,无故障存储器的内容被恢复。使用VHSIC硬件描述语言(VHDL)对新方案的RAM BIST电路进行了指定和验证。使用商业逻辑合成工具,可以自动合成任意RAM大小的BIST电路实例。与Cockburn和Sat描述的方案一样,对于4 Mb RAM,新方案的硬件面积开销低于1%,对于更大的RAM尺寸,这个数字会迅速下降。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信