First demonstration of phase change memory device using solution processed GeTe nanoparticles

Abstract

We present the first demonstration of a functional Phase Change Memory (PCM) device fabricated using solution processed GeTe phase change nanoparticle. The device shows the characteristic memory behavior of crystallization and threshold switching. The cycling endurance of the device is up to 100 cycles. The cells are currently the best performing solution processed phase change material based memory devices reported so far.