Total Ionizing Dose Effects of 1 Mb RfO2-based Resistive-Random-Access-Memory

Abstract

Total ionizing dose (TID) induced upset errors in Hf02-based resistive-random-access-memory (RRAM) with 1T1R storage cell structure are investigated. Radiation-induced leakage current in the access transistors on the same bit-lines causes a read decision failure and bit errors observed during TID irradiation experiments. This is verified by testkeys and HSPICE simulations based on the actual circuit structure of the 1 Mb RRAM.