A simple method for characterization of MOSFET serial resistance asymmetry

Abstract

A method for a direct extraction of individual serial resistances of MOSFET source/drain electrodes is presented. It is based on the device I-V characteristics in a saturation range measured for two device configurations inverted with respect to source and drain electrodes. A threshold voltage necessary for the saturation range modeling is determined from the non-saturation range I-V characteristics. Based on the measurement data determined for the SOI MOSFETs fabricated in ITE the proposed method has been compared with other techniques.