600 V trench-gate NPT-IGBT with excellent low on-state voltage

Abstract

The 600 V Non-Punch Through (NPT) IGBT which has low on-state voltage (V/sub CE/(sat)) has been developed. This device has a fine pitch trench-gate structure at the emitter side and the collector layer with low injection efficiency at collector side. A novel profile has been installed to realize low injection efficiency and low V/sub CE/(sat). By numerical simulation, it has been confirmed that the trade-off relation between V/sub CE/(sat) and turn-off loss of the trench-gate NPT-IGBT is as good as that of the trench-gate punch through (PT-)IGBT. Adopting the novel profile for the collector structure, the low V/sub CE/(sat) of 1.6 V at 180 A/cm/sup 2/ has been realized for the 600 V trench-gate NPT-IGBT.