A new approach to the robust wirebonding

Abstract

Electronics manufacturers are pursuing miniaturization in order to cope with the prevailing electronic trends. In doing so, they are faced with shrinking the size of silicon chips, while adding more functions (the number of the inputs and outputs, I/Os). However, the IC component yield decreases with the increase in I/Os, since the wirebonding process yield providing the interconnection for the I/Os remains constant. The bottom line is lower profits. Based on the diffusion theories behind wirebonding and the effects of both thermal and kinetic energies on the behavior of materials, the authors propose a model for a "robust" bond and an approach to obtain that model in the wirebonding process.