C. Ni, K. V. Rao, F. Khaja, S. Sharma, S. Tang, J. J. Chen, K. Hollar, N. Breil, X. Li, M. Jin, C. Lazik, J. Lee, H. Maynard, N. Variam, A. Mayur, S. Kim, H. Chung, M. Chudzik, R. Hung, N. Yoshida, N. Kim
{"title":"Ultra-low NMOS contact resistivity using a novel plasma-based DSS implant and laser anneal for post 7 nm nodes","authors":"C. Ni, K. V. Rao, F. Khaja, S. Sharma, S. Tang, J. J. Chen, K. Hollar, N. Breil, X. Li, M. Jin, C. Lazik, J. Lee, H. Maynard, N. Variam, A. Mayur, S. Kim, H. Chung, M. Chudzik, R. Hung, N. Yoshida, N. Kim","doi":"10.1109/VLSIT.2016.7573383","DOIUrl":null,"url":null,"abstract":"We report a record-setting low NMOS contact resistivity of 1.2×10<sup>-9</sup> Ωcm<sup>2</sup> compatible with Ti/Si system and dopant segregation Schottky (DSS) based solution. The ultra-low contact resistivity of Ti/Si system is demonstrated with Highly Doped Si:P Epi layer and P implantation using conformal plasma implant followed by millisecond laser anneal. Additionally, we show that short-pulse nanosecond laser as post implant anneal provides a promising pathway to further improve NMOS ρ<sub>C</sub> to below 1×10<sup>-9</sup> Ωcm<sup>2</sup> for the post 7 nm nodes.","PeriodicalId":129300,"journal":{"name":"2016 IEEE Symposium on VLSI Technology","volume":"8 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"26","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE Symposium on VLSI Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.2016.7573383","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 26
Abstract
We report a record-setting low NMOS contact resistivity of 1.2×10-9 Ωcm2 compatible with Ti/Si system and dopant segregation Schottky (DSS) based solution. The ultra-low contact resistivity of Ti/Si system is demonstrated with Highly Doped Si:P Epi layer and P implantation using conformal plasma implant followed by millisecond laser anneal. Additionally, we show that short-pulse nanosecond laser as post implant anneal provides a promising pathway to further improve NMOS ρC to below 1×10-9 Ωcm2 for the post 7 nm nodes.
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