A highly Integrated SiGe BiCMOS Class F Power Amplifier for Bluetooth Application

2006 International Symposium on VLSI Design, Automation and Test Pub Date : 2006-04-26 DOI:10.1109/VDAT.2006.258183

Jia-Liang Chen, T. Chiu, C. Jou

引用次数: 4

Abstract

A highly integrated 2.4-GHz class F power amplifier using TSMC 0.35mum 3P3M standard SiGe BiCMOS process is presented. This amplifier integrates both the input matching network and output fundamental and third harmonic loading networks onto the chip. Additional fine tuning output circuit is implemented outside the chip for some flexibility. Measurement results show that the power amplifier can exhibit an output power about 20dBm, with power added efficiency (PAE) of 34.2% at 2.4-GHz Bluetooth frequency band. This result demonstrates the potential of full-scale integration of the high efficiency power amplifier

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一种用于蓝牙应用的高集成SiGe BiCMOS F类功率放大器

提出了一种采用台积电0.35mum 3P3M标准SiGe BiCMOS工艺的高集成度2.4 ghz F类功率放大器。该放大器将输入匹配网络和输出基频和三次谐波负载网络集成到芯片上。额外的微调输出电路在芯片外实现，以获得一定的灵活性。测量结果表明，该功率放大器在2.4 ghz蓝牙频段的输出功率约为20dBm，功率附加效率(PAE)为34.2%。这一结果证明了高效功率放大器全面集成的潜力

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2006 International Symposium on VLSI Design, Automation and Test

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