Recent developments in NAND flash scaling

Abstract

NAND Flash cell has scaled by ≫l000X in area since its inception over 2 decades ago. There are, however, several scaling challenges that need to be overcome to continue scaling below the 3X node. Many evolutionary and revolutionary approaches, such as high-K inter-poly-dielectric (IPD), engineered tunnel barriers, trap based charge storage devices, as well as 3-D structures are being pursued to overcome these scaling challenges. The paper will discuss some of these challenges and related developments.