Various GaAs to Si wafer bonding approaches for solar cells applications

2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2017-05-01 DOI:10.23919/LTB-3D.2017.7947421

V. Larrey, L. Vauche, E. Veinberg-Vidal, M. Tedjini, C. Morales, F. Foumel, K. Abadie

引用次数: 0

Abstract

Different GaAs//Si wafer bonding approaches are compared in order to fabricate III-V tandem solar cells. Bonding interface characteristics and electrical properties will be discussed for standard and improved direct wafer bonding sequences as well as for covalent bonding technique using SAB.

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应用于太阳能电池的各种砷化镓硅晶圆键合方法

为了制造III-V串联太阳能电池，比较了不同的GaAs//Si晶圆键合方法。本文将讨论标准和改进的晶圆直接键合顺序以及使用SAB的共价键合技术的键合界面特性和电学性能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)

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