A low-phase-noise monolithically integrated 60 GHz push-push VCO for 122 GHz applications in a SiGe bipolar technology

A. Chakraborty, S. Trotta, R. Weigel
{"title":"A low-phase-noise monolithically integrated 60 GHz push-push VCO for 122 GHz applications in a SiGe bipolar technology","authors":"A. Chakraborty, S. Trotta, R. Weigel","doi":"10.1109/BCTM.2013.6798174","DOIUrl":null,"url":null,"abstract":"This paper presents a 60 GHz push-push VCO fabricated in an automotive qualified SiGe:C bipolar production technology with an ft of 170 GHz and fmax of 250 GHz. The VCO uses an AC coupled varactor and features a transmission line based biasing scheme for the varactor to improve the phase noise. The VCO can be tuned from 58.2 GHz to 63 GHz and achieves a minimum phase noise of -108 dBc/Hz at 1 MHz offset. The phase noise remains below -105 dBc/Hz over the entire tuning range. The VCO consumes 145 mW from a 3.3 V power supply.","PeriodicalId":272941,"journal":{"name":"2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BCTM.2013.6798174","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 8

Abstract

This paper presents a 60 GHz push-push VCO fabricated in an automotive qualified SiGe:C bipolar production technology with an ft of 170 GHz and fmax of 250 GHz. The VCO uses an AC coupled varactor and features a transmission line based biasing scheme for the varactor to improve the phase noise. The VCO can be tuned from 58.2 GHz to 63 GHz and achieves a minimum phase noise of -108 dBc/Hz at 1 MHz offset. The phase noise remains below -105 dBc/Hz over the entire tuning range. The VCO consumes 145 mW from a 3.3 V power supply.
低相位噪声单片集成60ghz推推式压控振荡器,适用于122ghz SiGe双极技术应用
本文介绍了一种采用汽车级SiGe:C双极生产技术制造的60 GHz推推式压控振荡器,其ft为170 GHz, fmax为250 GHz。该压控振荡器采用交流耦合变容器,并采用基于传输线的偏置方案来改善变容器的相位噪声。该VCO可在58.2 GHz至63 GHz范围内调谐,在1mhz偏移时可实现-108 dBc/Hz的最小相位噪声。在整个调谐范围内,相位噪声保持在-105 dBc/Hz以下。VCO从3.3 V电源消耗145 mW。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信