Extended study of crosstalk in SOI-SIMOX substrates

Abstract

This work analyzes crosstalk phenomena in SOI-SIMOX substrates by means of two-dimensional device simulations and measurements on test structures. The influence of the substrate resistivity and of guard rings is studied. The results are compared with those obtained for standard CMOS technology. A significant crosstalk reduction, up to 10 GHz, is obtained with high-resistivity substrates. A simple modeling is proposed to explain and simulate the phenomenon.