Low temperature MOS device modeling

Abstract

The state of the art in self-consistent numerical low-temperature MOS modeling is reviewed. The physical assumptions required to describe carrier transport at liquid-nitrogen temperature are discussed. Particular emphasis is put on the models for space charge (impurity freeze-out), carrier mobility (temperature dependence of scattering mechanisms at a semiconductor-insulator interface), and carrier generation-recombination (impact ionization). The differences with regard to the numerical methods required for the solution of low-temperature models compared to room-temperature models are explained. Typical results obtained with the simulator MINIMOS 4 are presented.<>