Comprehensive investigations on neutral and attractive traps in random telegraph signal noise phenomena using (100)- and (110)-orientated CMOSFETs

Abstract

Neutral traps and attractive traps in random telegraph noise (RTN), on both (100)- and (110)-orientated CMOSFETs, are well distinguished and systematically studied for the first time, including both electron and hole traps. It is found that neutral traps energy distributions are higher than attractive traps and, most importantly, neutral traps caused much larger threshold voltage shifts (ΔVth_RTN) than attractive traps do, especially in (110)-nMOSFETs. Furthermore, based on obtained ΔVth_RTN in CMOSFETs on surface of various orientations, 3D structure optimizations are discussed in view of ΔVth_RTN suppression.