Design and analysis of on-interposer active power distribution network for an efficient simultaneous switching noise suppression in 2.5D IC

Subin Kim, Youngwoo Kim, Kyungjun Cho, Jinwook Song, Joungho Kim
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引用次数: 2

Abstract

Simultaneous switching noise (SSN) occurs when clock synchronized core circuits switch simultaneously. Furthermore, a huge amount of the SSN generated by simultaneous switching current (SSC) with high power distribution network (PDN) impedance at anti-resonance can cause electromagnetic interference (EMI) problems and logic failure. In multi-core processors, the spectrum of SSC is varied by power management techniques such as dynamic voltage and frequency scaling (DVFS). However, conventional PDN cannot respond to these various SSC spectrum due to its passive characteristics. In this paper, an externally controllable on-interposer decoupling capacitance scheme, namely on-interposer active PDN, is proposed to efficiently suppress the SSN in 2.5D IC. The proposed scheme designed on the active silicon interposer can shift the frequency of the PDN anti-resonance peak with on-interposer decoupling capacitors controlled by external switching operation based on monitored SSN voltage. To verify the proposed scheme, it is modeled and analyzed in the frequency and time domain simulations. We have demonstrated that an efficient SSN suppression is achieved by obtaining the optimum on-interposer decoupling capacitance and the maximum ratio of the SSN suppression was 31.3%.
2.5D集成电路中有效同时抑制开关噪声的中间有功配电网络设计与分析
当时钟同步的核心电路同时开关时,会产生同步开关噪声。此外,同时开关电流(SSC)与高功率配电网(PDN)抗共振阻抗产生的大量SSN会引起电磁干扰(EMI)问题和逻辑故障。在多核处理器中,SSC的频谱受动态电压和频率缩放(DVFS)等电源管理技术的影响而变化。然而,传统PDN由于其无源特性而无法响应这些不同的SSC频谱。本文提出了一种外部可控的介入层去耦电容方案,即介入层有源PDN,以有效抑制2.5D IC中的SSN。该方案设计在有源硅介入层上,利用基于监测到的SSN电压的外部开关操作控制的介入层去耦电容,实现了PDN抗谐振峰值频率的移位。为了验证所提出的方案,在频域和时域上对其进行了建模和分析。我们已经证明,通过获得最佳的介子上去耦电容,可以实现有效的SSN抑制,SSN抑制的最大比率为31.3%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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