Modeling the effects of traps on the I-V characteristics of GaAs MESFETs

Abstract

This paper provides an investigation on the effects of deep level traps on the large-signal I-V characteristics of GaAs MESFETs by means of measurements and physics-based device simulations; results give clear indications that pulsed I-V measurements are sufficient in order to characterize large-signal AC device operation and provide a good physical basis for circuit-level large signal MESFET models.