Atomic Scale Strain Measurement for Nanoelectronic Devices

Abstract

Atomic scale lattice strain measurement using high resolution transmission electron microscopic (HR- TEM) is an important application for semiconductor device characterization. Recent advancement and issues in these areas are discussed. Their potential applications in contemporary sub-45 nm metal-oxide- semiconductor field effect transistor (MOSFET) technology nodes are crucial. Major technical limitation in using these characterization techniques in wafer production environment is discussed and solution proposed.