Synaptic properties considering temperature effect in HfOx-based memristor - Demonstration of homo-thermal synaptic behaviors

Abstract

In this work, we fabricated HfOx-based RRAM-type memristors that are CMOS-compatible and analyzed its synapse characteristics. Ni/HfOx/p++Si filament-type device exhibits abrupt resistive changes in both SET and RESET operations in the same pulse response as the DC sweep, while interface-type Ni/HfOx/n++Si devices show gradual changes. Interface-type devices exhibit more dynamic states as the temperature rises, while the recognition rate of neural network using memristive synapses did not degrade for T < 145 °C. Our results suggest that neuromorphic chips fabricated using RRAM-type memristors can operate under wide temperature range.