Molding process development for high density I/Os Fan-Out Wafer Level Package (FOWLP) with fine pitch RDL

M. Ding, S. Chong, D. Ho, S. Lim
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引用次数: 2

Abstract

With the perpetual demand for greater functionalities, better performance and greater energy efficiency at cheaper manufacturing cost and smaller form factor, Fan-Out Wafer Level Packaging (FOWLP) technology has emerged as one of the most promising technology in fulfilling the demands from electronic devices for mobile and network applications. In our FOWLP mold-first approach development work, we developed the 300mm compression molding process for high density input/output (IO)s reconstituted FOWLP mold wafer fabricated with fine pitch redistributed layer (RDL) of line width / line space (LW/LS) ≤5/5μm using the conventional mold-first approach. Our compression molding process development aims to achieve a chip-to-mold non planarity ≤3μm, warpage of reconstituted FOWLP mold wafer ≤1mm and wafer level die shift ≤10μm. In this paper, we will discuss on the 300mm compression molding development work like materials selection, pick-and-place (PnP) process parameters and die shift compensation via constant and dynamic pre-shift methodologies in achieving our targeted specifications for the fabrication of fine pitch RDL FOWLP.
具有细间距RDL的高密度I/ o扇出晶圆级封装(FOWLP)成型工艺开发
随着对更大的功能,更好的性能和更高的能源效率,更低的制造成本和更小的外形尺寸的不断需求,扇出晶圆级封装(FOWLP)技术已经成为满足移动和网络应用电子设备需求的最有前途的技术之一。在我们的FOWLP模具优先方法开发工作中,我们开发了300mm压缩成型工艺,用于高密度输入/输出(IO)重构的FOWLP模具晶圆,其线宽/线间距(LW/LS)≤5/5μm的细间距重分布层(RDL)采用传统的模具优先方法制造。我们的压缩成型工艺开发目标是实现芯片到模具的非平面度≤3μm,重组FOWLP模具晶圆翘曲≤1mm,晶圆级模移≤10μm。在本文中,我们将讨论300mm压缩成型开发工作,如材料选择,拾取和放置(PnP)工艺参数和模移补偿,通过恒定和动态预移方法来实现我们的目标规格,用于制造细间距RDL FOWLP。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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