Numerical simulations of thermo-mechanical stresses during the casting of multi-crystalline silicon ingots

M. Oswald, M. Turek, J. Bagdahn
{"title":"Numerical simulations of thermo-mechanical stresses during the casting of multi-crystalline silicon ingots","authors":"M. Oswald, M. Turek, J. Bagdahn","doi":"10.1109/ESIME.2010.5464525","DOIUrl":null,"url":null,"abstract":"Silicon is an important semiconductor substrate for manufacturing solar cells. The mechanical and electrical properties of multi-crystalline silicon (mc-Si) are primarily influenced by the quality of the feedstock material and the crystallization process. In this work, numerical calculations, applying finite element analysis (FEA) and finite volume methods (FVM) are presented, in order to predict thermo-mechanical stresses during the solidification of industrial size mc-Si ingots. A two-dimensional global model of an industrial multi-crystallization furnace was created for thermal stationary and time-dependent calculations using the software tool CrysMAS. Subsequent thermo-mechanical analyses of the silica crucible and the ingot were performed with the FEA code ANSYS, allowing additional calculations to define mechanical boundary conditions as well as material models. Our results show that thermal analyses are in good agreement with experimental measurements. Furthermore we show that our approach is suitable to describe the generation of thermo-mechanical stress within the silicon ingot.","PeriodicalId":152004,"journal":{"name":"2010 11th International Thermal, Mechanical & Multi-Physics Simulation, and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"47 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-04-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 11th International Thermal, Mechanical & Multi-Physics Simulation, and Experiments in Microelectronics and Microsystems (EuroSimE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESIME.2010.5464525","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3

Abstract

Silicon is an important semiconductor substrate for manufacturing solar cells. The mechanical and electrical properties of multi-crystalline silicon (mc-Si) are primarily influenced by the quality of the feedstock material and the crystallization process. In this work, numerical calculations, applying finite element analysis (FEA) and finite volume methods (FVM) are presented, in order to predict thermo-mechanical stresses during the solidification of industrial size mc-Si ingots. A two-dimensional global model of an industrial multi-crystallization furnace was created for thermal stationary and time-dependent calculations using the software tool CrysMAS. Subsequent thermo-mechanical analyses of the silica crucible and the ingot were performed with the FEA code ANSYS, allowing additional calculations to define mechanical boundary conditions as well as material models. Our results show that thermal analyses are in good agreement with experimental measurements. Furthermore we show that our approach is suitable to describe the generation of thermo-mechanical stress within the silicon ingot.
多晶硅铸锭铸造过程中热-机械应力的数值模拟
硅是制造太阳能电池的重要半导体衬底。多晶硅(mc-Si)的力学和电学性能主要受原料质量和结晶过程的影响。在这项工作中,提出了数值计算,应用有限元分析(FEA)和有限体积法(FVM),以预测工业尺寸mc-Si锭凝固过程中的热机械应力。利用软件工具CrysMAS建立了工业多结晶炉的二维全局模型,用于热稳态和时间相关计算。随后使用有限元分析软件ANSYS对硅坩埚和钢锭进行了热力学分析,并进行了额外的计算,以确定力学边界条件和材料模型。结果表明,热分析结果与实验结果吻合较好。此外,我们还证明了我们的方法适用于描述硅锭内部热机械应力的产生。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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