System-level-model development of an SWCNT based piezoresistive sensor in VHDL-AMS

V. Kolchuzhin, J. Mehner, Erik Markert, U. Heinkel, C. Wagner, J. Schuster, T. Gessner
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引用次数: 3

Abstract

This article deals with the model development for a single walled carbon nanotube (SWCNT) piezoresistive sensor at system level design. The framework of VHDL-AMS is used for implementation and simulation, consisting of compact submodels that describe components performing heterogeneous functions. The SWCNT mechanical and electrical compact models presented in the article are based on the analytical model, lumped element model and the simulation results based on density functional theory (DFT). The macromodels of the MEMS are built using a reduced order modeling technique based on finite element simulations. This article presents and discusses the most important aspects of the development of system models and essential model parameters.
VHDL-AMS中基于swcnts的压阻传感器的系统级模型开发
本文讨论了单壁碳纳米管压阻传感器在系统级设计中的模型开发。VHDL-AMS框架用于实现和仿真,该框架由紧凑的子模型组成,这些子模型描述了执行异构功能的组件。本文建立了基于解析模型、集总元模型和基于密度泛函理论(DFT)的仿真结果的单壁碳纳米管力学和电气紧凑模型。采用基于有限元仿真的降阶建模技术,建立了微机电系统的宏观模型。本文介绍并讨论了系统模型开发的最重要方面和基本模型参数。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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