Takeyasu Saito, Kazunobu Wakamatsu, Kazuki Ueda, N. Okamoto
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引用次数: 0
Abstract
TiSiCN thin film, as a Ti-based MAX compounds, was prepared through reactive sputtering with Ar or N2 to evaluate as a wiring material instead of Cu. We investigated in detail the effects of target composition by changing Si area on TiC disk as a sputtering target to control Si/TiC ratio and also investigated the effects of film formation conditions on film orientation, surface morphology, and sheet resistance.