Evaluation of Reactive Sputtered Ti-group MAX Alloy with Different A Elements for Wiring Material

Takeyasu Saito, Kazunobu Wakamatsu, Kazuki Ueda, N. Okamoto
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Abstract

TiSiCN thin film, as a Ti-based MAX compounds, was prepared through reactive sputtering with Ar or N2 to evaluate as a wiring material instead of Cu. We investigated in detail the effects of target composition by changing Si area on TiC disk as a sputtering target to control Si/TiC ratio and also investigated the effects of film formation conditions on film orientation, surface morphology, and sheet resistance.
含不同A元素的反应溅射ti族MAX合金用于线材的评价
用Ar或N2反应溅射法制备TiSiCN薄膜作为ti基MAX化合物,评价其作为替代Cu的布线材料。我们通过改变TiC盘上的Si面积作为溅射靶来控制Si/TiC比,详细研究了靶成分的影响,并研究了薄膜形成条件对薄膜取向、表面形貌和薄片电阻的影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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