A compact model for RRAM including random telegraph noise

Abstract

In this paper, we develop a RRAM compact model accounting for random telegraph noise (RTN) effect. In particular, we develop a Monte Carlo method to effectively capture the behaviors of the traps in the tunneling gap, which can be used to predict the current fluctuation caused by RTN. The model is validated with experimental data under various operating conditions. The model can be applied to study RRAM circuit reliability for efficient design space explorations.