RTN-based defect tracking technique: Experimentally probing the spatial and energy profile of the critical filament region and its correlation with HfO2RRAM switching operation and failure mechanism

Abstract

For the first time, an RTN based defect tracking technique has been developed that can monitor the defect movement and filament alteration in RRAM devices. Critical filament region has been identified during switching operation at various conditions and new endurance failure mechanism is revealed. This technique provides a useful tool for RRAM technology development.