Application of SLAT methodology in bond pad process evaluation for sidewall polymer removal

2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2016-07-18 DOI:10.1109/IPFA.2016.7564311

Yanjing Yang, Xintong Zhu, R. R. Nistala, Suhas Vasant Shaha, Vincent Chai, S. Pani, Pandurangan Madhavan, Koesun Pak, S. Zhao, Jinsong Xu

{"title":"Application of SLAT methodology in bond pad process evaluation for sidewall polymer removal","authors":"Yanjing Yang, Xintong Zhu, R. R. Nistala, Suhas Vasant Shaha, Vincent Chai, S. Pani, Pandurangan Madhavan, Koesun Pak, S. Zhao, Jinsong Xu","doi":"10.1109/IPFA.2016.7564311","DOIUrl":null,"url":null,"abstract":"Bond pad sidewall polymer removal in a thick passivation device was attempted using different approaches, longer NE111 clean, 250°C bake and high temperature (HT) NE111 clean. SLAT methodology was adopted to evaluate the Al bond pad quality due to F-content on the bond pad surfaces during long term wafer storage. Both for 250°C bake and HT-NE111 no Fluorine-crystal defects were observed on bond pad surfaces with SLAT studies. However, Cu segregation was noticed, which can cause Al-Cu galvanic corrosion, for 250 °C baking process. But with HT NEU, bond pad sidewall polymers were completely removed and thus, mitigating the risk of F-crystal defect formation. Moreover, this approach was without any other type of defects. This is an alternative approach where EKC solvent is not available to manufacture bond pad surface with no sidewall polymers. Wafers, which were processed with HT NE111 clean, were stored up to 3 months and display no F-crystal on bond pad surfaces.","PeriodicalId":206237,"journal":{"name":"2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"626 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-07-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA.2016.7564311","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

Abstract

Bond pad sidewall polymer removal in a thick passivation device was attempted using different approaches, longer NE111 clean, 250°C bake and high temperature (HT) NE111 clean. SLAT methodology was adopted to evaluate the Al bond pad quality due to F-content on the bond pad surfaces during long term wafer storage. Both for 250°C bake and HT-NE111 no Fluorine-crystal defects were observed on bond pad surfaces with SLAT studies. However, Cu segregation was noticed, which can cause Al-Cu galvanic corrosion, for 250 °C baking process. But with HT NEU, bond pad sidewall polymers were completely removed and thus, mitigating the risk of F-crystal defect formation. Moreover, this approach was without any other type of defects. This is an alternative approach where EKC solvent is not available to manufacture bond pad surface with no sidewall polymers. Wafers, which were processed with HT NE111 clean, were stored up to 3 months and display no F-crystal on bond pad surfaces.

查看原文本刊更多论文

SLAT方法在边壁聚合物去除粘结垫工艺评价中的应用

在厚钝化装置中，尝试使用不同的方法去除键垫侧壁聚合物，包括更长时间的NE111清洗、250°C烘烤和高温(HT) NE111清洗。采用SLAT方法对长期储存过程中铝键垫表面的f含量进行了评价。在250°C烘烤和HT-NE111中，用SLAT研究在键合垫表面均未观察到氟晶体缺陷。然而，在250°C烘烤过程中，Cu偏析引起Al-Cu电偶腐蚀。但是使用HT NEU，键合垫侧壁聚合物被完全去除，从而降低了f晶体缺陷形成的风险。此外，这种方法没有任何其他类型的缺陷。这是一种替代方法，在没有EKC溶剂的情况下，可以制造无边壁聚合物的粘结垫表面。用HT NE111清洁处理过的晶圆，储存了3个月，在键合垫表面没有显示f晶体。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)

自引率

0.00%

发文量