Optimized thermo-reflectance system for measuring the thermal properties of thin-films and their interfaces

Twenty-Second Annual IEEE Semiconductor Thermal Measurement And Management Symposium Pub Date : 2006-03-14 DOI:10.1109/STHERM.2006.1625211

M. Burzo, P. Komarov, P. Raad

引用次数: 22

Abstract

An overall evaluation of the transient thermo-reflectance (TTR) technique as applied to the measurement of thermal properties of electronic materials is presented in this article. First, the TTR method is presented. Then, the focus is placed on a systematic characterization of the performance of the thermoreflectance technique in which the influences of the most important system parameters on the accuracy of the TTR measurements are ascertained (Burzo et al., 2002). Finally, the power of the TTR measurement technique and its optimization are demonstrated through representative measurements, first of bulk materials (Komarov et al., 2003) and then of thin-film materials. Results are then shown addressing the effects of doping, isotopic purity, interface resistance, deposition/growing methods, and film thickness on the thermal properties of the selected bulk and thin-film layers

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用于测量薄膜及其界面热性能的优化热反射系统

本文对瞬态热反射(TTR)技术在电子材料热性能测量中的应用进行了全面评价。首先，提出了TTR方法。然后，重点放在热反射技术性能的系统表征上，其中确定了最重要的系统参数对TTR测量精度的影响(Burzo et al.， 2002)。最后，通过代表性的测量，首先是块状材料(Komarov et al.， 2003)，然后是薄膜材料，证明了TTR测量技术的力量及其优化。结果显示了掺杂、同位素纯度、界面电阻、沉积/生长方法和薄膜厚度对所选体层和薄膜层热性能的影响

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Twenty-Second Annual IEEE Semiconductor Thermal Measurement And Management Symposium

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