An enhanced model for thin film resistor matching

T. O'Dwyer, Michael Peter Kennedy
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引用次数: 5

Abstract

This paper presents an improved model which estimates the geometry required to achieve a desired matching target for rectangular resistors in a semiconductor process. A methodology is explained for estimating the model parameters involved. Measured data is presented which covers an extensive range of geometries on a particular thin film process, and the estimation methodology is followed to derive appropriate model parameters. Using this new model, insights into the underlying error sources for the process are obtained.
薄膜电阻匹配的改进模型
本文提出了一种改进的模型,该模型估计了在半导体工艺中实现理想匹配目标所需的矩形电阻的几何形状。介绍了一种估算模型参数的方法。测量数据被提出,其中涵盖了广泛的几何形状在一个特定的薄膜过程,估计方法是遵循推导适当的模型参数。使用这个新模型,可以深入了解流程的潜在错误源。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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CiteScore
0.80
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