Hot carrier degradation in nanowire transistors: Physical mechanisms, width dependence and impact of Self-Heating

Abstract

We present an extensive study of Hot Carrier reliability in N-Ωfet nanowires. For the first time 3 HC degradation modes were clearly evidenced as in planar technology and accurately modeled. Moreover HC reliability was proved to be width-independent. Finally it is shown that, although SH is important in nanowires, it has almost no implication on its HC reliability because of the weak temperature dependence of the HC mechanisms.