Growing reliable gate oxides on thick film SOI substrates

Abstract

One of the key elements of a reliable CMOS process is a robust, defect free gate oxide. The formation of such layers on bulk substrates is a topic that has been studied for many years and has reached an advanced state of understanding. In contrast the growth of reliable gate oxides on either thick or thin film SOI substrates is considerably less well understood.This paper discusses the formation of gate oxides on thick film SOI substrates. Two topics have been covered in this study, long term reliability of the oxide and early life failure rate of the oxide.<>