Real time failure analysis of Cu interconnect defectivity through bitmap overlay analysis

V. Sheth, H. Nguyen, P. Dao, A.M. Miscione
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引用次数: 0

Abstract

Bitmap to in-line defect overlay analysis was performed on a 4 Mbit SRAM memory array, which uses copper interconnect. This analysis provides an effective method of identifying killer copper defects, which inhibit product yield. It has been shown that bitmap overlay (BMOL) analysis is a very effective way of identifying killer defects for any technology at any process step. This can be proven to be a very powerful tool to relate physical defectivity to significant yield loss mechanisms. It has been shown that BMOL can be used to assign a root cause mechanism or a defect to an actual electrical fail without incurring tedious hours of destructive failure analysis. Failure analysis was, however, used to initially verify and confirm root cause of the electrical failures identified by BMOL analysis.
基于位图叠加分析的铜互连缺陷实时失效分析
对采用铜互连的4 Mbit SRAM存储器阵列进行了位图-内线缺陷叠加分析。该分析提供了一种有效的方法来识别抑制产品收率的致命铜缺陷。研究表明,位图叠加(BMOL)分析是一种非常有效的技术缺陷识别方法。这可以被证明是一个非常有力的工具,将物理缺陷与重大产量损失机制联系起来。事实证明,BMOL可以用于确定实际电气故障的根本原因机制或缺陷,而无需进行冗长的破坏性故障分析。然而,故障分析用于初步验证和确认BMOL分析确定的电气故障的根本原因。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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