SOTB (Silicon on Thin Buried Oxide): More than Moore technology for IoT and Automotive

T. Hasegawa, Yoshiki Yamamoto, H. Makiyama, H. Shinkawata, S. Kamohara, Y. Yamaguchi
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引用次数: 5

Abstract

Ultra low power performance is indispensable for Micro Controller Unit (MCU) used as wireless sensor and communication nodes which needs battery maintenance free and energy harvesting operation in the Internet of things (IoT) era. The Silicon on Thin Buried Oxide (SOTB) is one of the most suitable CMOS technology for ultra low power MCU because of its small variability and back bias controllability. This paper describes the mechanism of ultra low power performance of SOTB, performance demonstration of transistor, SRAM and MCU test chip, and what SOTB will realize for IoT and Automotive. SOTB will have less than 1/10 of power efficiency by low leakage current at standby mode and low current consumption at operation mode which today's technology cannot realize.
SOTB(薄埋氧化物硅):物联网和汽车领域的摩尔技术
在物联网(IoT)时代,作为无线传感器和通信节点的微控制器(MCU)需要免电池维护和能量收集操作,超低功耗性能是必不可少的。薄埋氧化硅(SOTB)具有可变性小、反偏可控性好等优点,是最适合超低功耗单片机的CMOS技术之一。本文介绍了SOTB超低功耗性能的机理,晶体管、SRAM和MCU测试芯片的性能演示,以及SOTB在物联网和汽车领域的应用前景。待机状态下的低漏电流和工作状态下的低电流消耗将使SOTB的功率效率低于1/10,这是目前技术无法实现的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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