Contact resistance of TiW to ultra-thin phase change material layers

Abstract

In this article we report on the change in contact resistance of TiW to doped-Sb2Te in the 5nm–50nm thickness range of the PCM layer. This interface is characterized both in the amorphous and in crystalline state of doped-Sb2Te. The nature of the interface is characterized by electrical contact resistance measurements and is expressed in terms of specific contact resistance, ρC. Results from the measurements on these structures with illumination indicated the existence of a space-charge region at the metal amorphous doped-Sb2Te interface.