{"title":"Exploiting parallelism in resonators for large voltage gain in low power wake up radio front ends","authors":"Ruochen Lu, T. Manzaneque, Yansong Yang, S. Gong","doi":"10.1109/MEMSYS.2018.8346663","DOIUrl":null,"url":null,"abstract":"This paper reports a lithium niobate (LiNbO3) resonator array that, when used as a passive voltage amplifier, can produce a passive resonant voltage gain among the highest reported thus far for low-power wake-up radio front-ends. The high voltage gain is obtained by exploiting parallelism in the form of 56 arrayed identical shear horizontal mode resonators. The array of LiNbO3 devices is designed to simultaneously enable a large static capacitance of 1.05 pF, a spurious mode free response, and a large figure of merit (FoM=kt2-0 of 120, all of which are subsequently demonstrated for the first time for a large resonator array. As a result, voltage gains over 20 or 26 dB have been achieved for highly reactive loadings of typical CMOS wakeup radio front-end input. In addition to the high voltage gain, the array also features a high Q of 915, which produces to 3 dB FBW of 0.1% for filtering noise and interference in the RF ambience.","PeriodicalId":400754,"journal":{"name":"2018 IEEE Micro Electro Mechanical Systems (MEMS)","volume":"77 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"28","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE Micro Electro Mechanical Systems (MEMS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MEMSYS.2018.8346663","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 28
Abstract
This paper reports a lithium niobate (LiNbO3) resonator array that, when used as a passive voltage amplifier, can produce a passive resonant voltage gain among the highest reported thus far for low-power wake-up radio front-ends. The high voltage gain is obtained by exploiting parallelism in the form of 56 arrayed identical shear horizontal mode resonators. The array of LiNbO3 devices is designed to simultaneously enable a large static capacitance of 1.05 pF, a spurious mode free response, and a large figure of merit (FoM=kt2-0 of 120, all of which are subsequently demonstrated for the first time for a large resonator array. As a result, voltage gains over 20 or 26 dB have been achieved for highly reactive loadings of typical CMOS wakeup radio front-end input. In addition to the high voltage gain, the array also features a high Q of 915, which produces to 3 dB FBW of 0.1% for filtering noise and interference in the RF ambience.
本文报道了一种铌酸锂(LiNbO3)谐振器阵列,当用作无源电压放大器时,可以产生迄今为止报道的低功率唤醒无线电前端的最高无源谐振电压增益。利用56个排列相同的剪切水平模谐振器的并行性获得了高电压增益。LiNbO3器件阵列的设计同时实现了1.05 pF的大静态电容,无杂散模式响应和120的大品质系数(FoM=kt2-0),所有这些都在随后的大型谐振器阵列中首次得到了验证。因此,对于典型CMOS唤醒无线电前端输入的高无功负载,电压增益已超过20或26 dB。除了高电压增益外,该阵列还具有915的高Q,可产生0.1%的3 dB FBW,用于过滤射频环境中的噪声和干扰。