{"title":"Enhanced performance of Ag-filament threshold switching selector by rapid thermal processing","authors":"Qilin Hua, Huaqiang Wu, B. Gao, H. Qian","doi":"10.1109/VLSI-TSA.2018.8403855","DOIUrl":null,"url":null,"abstract":"Selector devices are typically employed to suppress sneak path currents in RRAM array. Here, we demonstrate a bidirectional Ag- filament threshold switching (TS) selector with an enhanced performance of large selectivity over 108 and high on-state current beyond 100 µA through rapid thermal processing (RTP). The TS selector has more than 100 M cycles endurance and can remain stable switching even when ambient temperature is up to 200°C. The mechanism of the TS selector is analyzed to explain the bidirectional selector characteristics. Indeed, this TS selector would be a good candidate for 1S1R configuration and future high-density 3D RRAM integration.","PeriodicalId":209993,"journal":{"name":"2018 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSI-TSA.2018.8403855","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
Selector devices are typically employed to suppress sneak path currents in RRAM array. Here, we demonstrate a bidirectional Ag- filament threshold switching (TS) selector with an enhanced performance of large selectivity over 108 and high on-state current beyond 100 µA through rapid thermal processing (RTP). The TS selector has more than 100 M cycles endurance and can remain stable switching even when ambient temperature is up to 200°C. The mechanism of the TS selector is analyzed to explain the bidirectional selector characteristics. Indeed, this TS selector would be a good candidate for 1S1R configuration and future high-density 3D RRAM integration.