Enhanced performance of Ag-filament threshold switching selector by rapid thermal processing

Qilin Hua, Huaqiang Wu, B. Gao, H. Qian
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引用次数: 2

Abstract

Selector devices are typically employed to suppress sneak path currents in RRAM array. Here, we demonstrate a bidirectional Ag- filament threshold switching (TS) selector with an enhanced performance of large selectivity over 108 and high on-state current beyond 100 µA through rapid thermal processing (RTP). The TS selector has more than 100 M cycles endurance and can remain stable switching even when ambient temperature is up to 200°C. The mechanism of the TS selector is analyzed to explain the bidirectional selector characteristics. Indeed, this TS selector would be a good candidate for 1S1R configuration and future high-density 3D RRAM integration.
通过快速热处理提高银丝阈值开关选择器的性能
选择器通常用于抑制RRAM阵列中的潜行路径电流。在这里,我们展示了一种双向银丝阈值开关(TS)选择器,通过快速热处理(RTP),具有超过108的大选择性和超过100 μ a的高导通电流的增强性能。TS选择器具有超过100 M的循环耐力,即使在环境温度高达200°C时也能保持稳定的开关。分析了TS选择器的工作机理,解释了TS选择器的双向特性。事实上,这个TS选择器将是1S1R配置和未来高密度3D RRAM集成的良好候选。
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