Replacement high-K/metal-gate High-Ge-content strained SiGe FinFETs with high hole mobility and excellent SS and reliability at aggressive EOT ∼7Å and scaled dimensions down to sub-4nm fin widths
P. Hashemi, T. Ando, K. Balakrishnan, E. Cartier, M. Lofaro, J. Ott, J. Bruley, K. Lee, S. Koswatta, S. Dawes, J. Rozen, A. Pyzyna, K. Chan, S. Engelmann, D. Park, V. Narayanan, R. Mo, E. Leobandung
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引用次数: 18
Abstract
High-Ge-content (HGC) SiGe FinFETs in a “replacement High-K and metal-gate” (RMG) process flow and with aggressive EOT scaling are demonstrated, for the first time. HGC SiGe pMOS FinFETs with high-mobility, record-low RMG long-channel SS=66mV/dec and great short-channel characteristics down to LG=21nm have been demonstrated. Gate stack and transport properties down to sub-4nm fin widths (WFIN) have been also studied for the first time. We demonstrate excellent RMG mobility and reliability at aggressive EOT~7Å, and excellent μeff=220cm2/Vs at Ninv=1013 for fins with WFIN~4nm, outperforming state-of-the-art devices at such dimensions and providing very promising results for FinFET scaling for future high-performance FinFET generations.
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