{"title":"Thermo-mechanical simulations of an open tungsten TSV","authors":"A. Singulani, H. Ceric, S. Selberherr","doi":"10.1109/EPTC.2012.6507061","DOIUrl":null,"url":null,"abstract":"A specific open Through Silicon Via (TSV) technology is analyzed by means of thermo-mechanical Finite Element Method (FEM) simulations in order to assess stress behavior and to identify critical stress points in the structure. An analytical expression is introduced for the stress field around one TSV and its application in the description of the stress in a particular arrangement of vias is discussed. The analysis provides a consistent justification for the robustness of the technology, while it also points out the potential failure points.","PeriodicalId":431312,"journal":{"name":"2012 IEEE 14th Electronics Packaging Technology Conference (EPTC)","volume":"57 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE 14th Electronics Packaging Technology Conference (EPTC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EPTC.2012.6507061","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7
Abstract
A specific open Through Silicon Via (TSV) technology is analyzed by means of thermo-mechanical Finite Element Method (FEM) simulations in order to assess stress behavior and to identify critical stress points in the structure. An analytical expression is introduced for the stress field around one TSV and its application in the description of the stress in a particular arrangement of vias is discussed. The analysis provides a consistent justification for the robustness of the technology, while it also points out the potential failure points.