Kai-Shin Li, Bo-Wei Wu, Lain‐Jong Li, Ming-Yang Li, Chia-Chin Cheng, Cho-Lun Hsu, Chang-Hsien Lin, Yi-Ju Chen, Chun-Chi Chen, C. Wu, Min-Cheng Chen, J. Shieh, W. Yeh, Y. Chueh, Fu-Liang Yang, C. Hu
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引用次数: 17
Abstract
A U-shape MoS2 pMOSFET with 10nm channel and poly-Si source/drain is demonstrated. The fabrication process is simple. Because the Si S/D serves as the nucleation seed for CVD MoS2 deposition, thin MoS2 is well deposited in the channel region any where over the fully scale oxide coated Si wafer. This is a big step forward toward a low cost multi-layer stacked TMD IC technology.
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