InP nanowire avalanche photodiode and bipolar junction phototransistor integrated on silicon substrate

Abstract

Using high quality, single crystalline InP nanowire grown on silicon substrate, we demonstrates sensitive avalanche photodiode with 26.6 A/W and bipolar junction phototransistor with 4 A/W integrated onto silicon substrate. The avalanche photodiode has unique radial p-n junction that allows it to reach a high avalanche gain of 100 at a low bias of 1 V. The bipolar junction phototransistor integrates a sensitive photodiode with a receiver circuit, creating a compact, monolithic receiver circuit for optical interconnect application. These devices are promising in bringing low energy, high bandwidth optical interconnects to silicon electronics.