Electromigration in Titanium Doped Aluminum Alloys

Abstract

Homogeneous films of titanium-doped aluminum and aluminum-1% silicon were evaluated for possible application as interconnects in integrated circuits. Titanium concentration was systemnatically varied in the range of 0 to 1.2 wt.%. Electromigration behavior was studied for each film composition as a function of temperature. Significant differences were found between the binary and ternary alloys, corresponding to differences in the film microstructure.