Excellent process control technology for highly manufacturable and high performance 0.18 /spl mu/m CMOS LSIs

Abstract

Summary form only given. Highly manufacturable and high performance 0.18 /spl mu/m CMOS technology for logic LSIs with excellent process controllability has been proposed. N/sub 2/O based oxynitride process and OPC (Optical Proximity Correction) technology was developed and realized superior uniformity in CMOSFET characteristics. A new Ti salicide technology which was fine line effect free down to 0.15 /spl mu/m was also established. These technologies were demonstrated and verified by application to 0.18 /spl mu/m high performance logic LSI with high performance interconnects technology.